FFSH3065A, SiC Schottky Diodes 650V 30A SIC SBD
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1 700 руб.
от 10 шт. —
1 340 руб.
от 100 шт. —
1 120 руб.
1 шт.
на сумму 1 700 руб.
Плати частями
от 425 руб. × 4 платежа
от 425 руб. × 4 платежа
Описание
Unclassified
650V EliteSiC (Silicon Carbide) Schottky Diodesonsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
Технические параметры
| Brand: | onsemi |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| If - Forward Current: | 30 A |
| Ifsm - Forward Surge Current: | 150 A |
| Ir - Reverse Current: | 200 uA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-2 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 259 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| REACH - SVHC: | Details |
| Series: | FFSH3065A |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 650 V |
| Vrrm - Repetitive Reverse Voltage: | 650 V |
| Diode Configuration | Single |
| Diode Technology | SiC Schottky |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 30A |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Peak Non-Repetitive Forward Surge Current | 1.125kA |
| Peak Reverse Repetitive Voltage | 650V |
| Pin Count | 2 |
| Rectifier Type | Schottky Diode |
| Вес, г | 6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов
