NCD57080ADR2G, Galvanically Isolated Gate Drivers Isolated High Current Gate Driver Isolated High Current Gate Driver

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Номенклатурный номер: 8004651889
Артикул: NCD57080ADR2G

Описание

Power\Power Management ICs\Galvanically Isolated Gate Drivers
NCD57080 Isolated High Current Gate Drivers onsemi NCD57080 Isolated High Current Gate Drivers are high-current single-channel IGBT gate drivers with 3.75kVrms internal galvanic isolation. These gate drivers are designed for high system efficiency and reliability in high power applications. The NCD57080 drivers feature short propagation delays with accurate matching, high transient and electromagnetic immunity, wide bias voltage ranges, and wide input voltage range. These drivers improve system efficiency and PWM signal integrity and offer system design flexibility. Typical applications include UPS, motor control, industrial power supplies, HVAC, and solar inverters.

Технические параметры

Brand: onsemi
Configuration: Non-Inverting
Factory Pack Quantity: 2500
Fall Time: 13 ns
Input Voltage, Max: 20 V
Input Voltage, Min: 3.3 V
Isolation Voltage: 3.75 kVrms
Manufacturer: onsemi
Maximum Continuous Output Current: 6.5 A
Maximum Operating Temperature: +125 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Output Current: 6.5 A
Package/Case: SOIC-8
Packaging: Reel, Cut Tape
Pd - Power Dissipation: 1.3 W
Product Category: Galvanically Isolated Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Propagation Delay - Max: 60 ns
Rise Time: 13 ns
Shutdown: No Shutdown
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 3.3 V
Technology: Si
Type: High Current Gate Driver
Output Current 8 A
Package Type SOIC
Pin Count 8
Supply Voltage 20V

Техническая документация

Datasheet
pdf, 813 КБ
Datasheet
pdf, 1178 КБ

Дополнительная информация

Калькуляторы группы «Переключатели распределения питания, драйверы нагрузки»
Типы корпусов импортных микросхем