AS4C256M16D3C-10BIN, DRAM DDR3, 4G, 256M x 16, 1.5V, 96-ball FBGA, 933MHz, Industrial Temp - Tray
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Описание
Semiconductors\Memory ICs\DRAM
DDR3 Synchronous DRAMAlliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Технические параметры
| Access Time: | 20 ns |
| Brand: | Alliance Memory |
| Data Bus Width: | 16 bit |
| Factory Pack Quantity: Factory Pack Quantity: | 209 |
| Manufacturer: | Alliance Memory |
| Maximum Clock Frequency: | 933 MHz |
| Maximum Operating Temperature: | +95 C |
| Memory Size: | 4 Gbit |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 256 M x 16 |
| Package / Case: | FBGA-96 |
| Packaging: | Tray |
| Product Category: | DRAM |
| Product Type: | DRAM |
| Subcategory: | Memory & Data Storage |
| Supply Current - Max: | 84 mA |
| Supply Voltage - Max: | 1.575 V |
| Supply Voltage - Min: | 1.425 V |
| Type: | SDRAM-DDR3 |
| Access Time | 20ns |
| Clock Frequency | 933MHz |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Size | 4Gb (256M x 16) |
| Memory Type | Volatile |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40В°C ~ 95В°C (TC) |
| Package | Tray |
| Package / Case | 96-TFBGA |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Technology | SDRAM - DDR3 |
| Voltage - Supply | 1.425V ~ 1.575V |
| Write Cycle Time - Word, Page | 15ns |
Техническая документация
Дополнительная информация
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