AS6C6416-55TIN, SRAM 64M 3V 55ns Low Power 4096k x 16
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Описание
Semiconductors\Memory ICs\SRAM
Low Power CMOS SRAMAlliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8.388.608-bit device organized as 1.048.576 words by 8-bits. AS6C1616 is a 16.777.216-bit device organized as 1.048.576 words by 16-bits. AS6C6264A is a 65.536-bit device organized as 8.192 words by 8 bits. AS6C62256 is a 262.144-bit device organized as 32.768 words by 8-bits. Available in different packages/cases.
Технические параметры
Access Time: | 55 ns |
Brand: | Alliance Memory |
Factory Pack Quantity: Factory Pack Quantity: | 96 |
Interface Type: | Parallel |
Manufacturer: | Alliance Memory |
Maximum Operating Temperature: | +85 C |
Memory Size: | 64 Mbit |
Memory Type: | SDR |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 4 M x 16 |
Package / Case: | TSOP-48 |
Packaging: | Tray |
Product Category: | SRAM |
Product Type: | SRAM |
Series: | AS6C6416-55 |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 20 mA |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 2.7 V |
Type: | Asynchronous |
Low Power | Yes |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Maximum Random Access Time | 55ns |
Memory Size | 64Mbit |
Minimum Operating Supply Voltage | 2.7 V |
Minimum Operating Temperature | -40 °C |
Mounting Type | Surface Mount |
Number of Bits per Word | 16bit |
Number of Words | 8388608 |
Organisation | 4M x 16 |
Package Type | TSOP-48 |
Pin Count | 48 |
Timing Type | Asynchronous |
Width | 12.10mm |
Вес, г | 29.83 |
Техническая документация
Datasheet
pdf, 665 КБ
Datasheet AS6C6416-55TIN
pdf, 741 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем