C3M0060065J, SiC MOSFETs SiC, MOSFET, 60mohm, 650V, TO-263-7, Industrial
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см. техническую документацию
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1443 шт., срок 5-7 недель
3 140 руб.
от 50 шт. —
2 340 руб.
от 1000 шт. —
2 130 руб.
1 шт.
на сумму 3 140 руб.
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от 785 руб. × 4 платежа
от 785 руб. × 4 платежа
Альтернативные предложения1
Описание
Unclassified
650V Silicon Carbide Power MOSFETsWolfspeed 650V Silicon Carbide Power MOSFETs offer low on-state resistances and switching losses for maximum efficiency and power density. The 650V MOSFETs are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, Solar (PV) inverters, uninterruptible power supplies, and battery management systems. Compared with silicon, Wolfspeed 650V silicon carbide MOSFETs enable 75% lower switching losses, ½ the conduction losses, and 3x higher power density.
Технические параметры
| Brand: | Wolfspeed |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 10 S |
| Id - Continuous Drain Current: | 36 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-7 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 136 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET |
| Qg - Gate Charge: | 46 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 8 ns |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -4 V, +15 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 36 A |
| Maximum Drain Source Voltage | 650 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TO-263-7 |
| Pin Count | 7 |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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