STGD20N45LZAG, IGBTs Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ
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4347 шт., срок 5-7 недель
620 руб.
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490 руб.
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от 250 шт. —
289.65 руб.
1 шт.
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Описание
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Automotive-Grade Internally Clamped IGBTs STMicroelectronics Automotive-Grade Internally Clamped IGBTs use the advanced PowerMESH™ technology optimized for coil driving in harsh environments in automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. The ESD-protected logic level gate input and an integrated gate resistor mean no external protection circuitry is required.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 475 V |
| Collector-Emitter Saturation Voltage: | 1.25 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 25 A |
| Continuous Collector Current Ic Max: | 25 A |
| Factory Pack Quantity: | 2500 |
| Gate-Emitter Leakage Current: | 625 uA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -12 V, 16 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 150 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | N |
| Collector Current (DC) | 25(A) |
| Configuration | Single |
| Gate to Emitter Voltage (Max) | 16(V) |
| Mounting | Surface Mount |
| Operating Temperature (Max) | 175C |
| Operating Temperature (Min) | -55C |
| Operating Temperature Classification | Military |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Rad Hardened | No |
| Automotive Standard | AEC-Q101 |
| Energy Rating | 300mJ |
| Gate Capacitance | 1011pF |
| Maximum Collector Emitter Voltage | 475 V |
| Maximum Continuous Collector Current | 25 A |
| Maximum Gate Emitter Voltage | 16V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Transistors | 1 |
| Transistor Configuration | Single |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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