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CSD23203W

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см. техническую документацию

130 руб.

от 10 шт. — 120 руб.

от 100 шт. — 78 руб.

от 500 шт. — 58.23 руб.

1 шт. на сумму 130 руб.

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от 0 руб. × 4 платежа

Номенклатурный номер: 8004693797

Бренд: Texas Instruments

Описание

Unclassified

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	27 ns
Forward Transconductance - Min:	14 S
Id - Continuous Drain Current:	3 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DSBGA-6
Pd - Power Dissipation:	750 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6.3 nC
Rds On - Drain-Source Resistance:	53 mOhms
Rise Time:	12 ns
Series:	CSD23203W
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	8 V
Vgs - Gate-Source Voltage:	-6 V, +6 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	0.0014