EM6J1T2R, MOSFETs FET Dual Pch -20V -200mA EMT6
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150702 шт., срок 5-7 недель
120 руб.
от 10 шт. —
110 руб.
от 100 шт. —
69 руб.
от 500 шт. —
50.47 руб.
1 шт.
на сумму 120 руб.
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Описание
Unclassified
Silicon Power MOSFETsROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 8000 |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT-563-6 |
| Part # Aliases: | EM6J1 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 1.4 nC |
| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Series: | EM6J1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Resistance | 9.6 Ω |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 mW |
| Minimum Gate Threshold Voltage | 0.3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-563 |
| Pin Count | 6 |
| Series | EM6J1 |
| Transistor Configuration | Dual Base |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Width | 1.3mm |
| Вес, г | 0.01 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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