HP8M31TB1
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см. техническую документацию
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496 шт., срок 5-7 недель
680 руб.
от 10 шт. —
530 руб.
от 100 шт. —
396 руб.
от 250 шт. —
341.33 руб.
1 шт.
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Альтернативные предложения1
Описание
Unclassified
Silicon Power MOSFETsROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 65 ns |
| Id - Continuous Drain Current: | 4.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-457-6 |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 35 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 8.5 A |
| Maximum Drain Source Resistance | 73 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V, ±20 V |
| Maximum Gate Threshold Voltage | 3(N Channel)V, 3(P Channel)V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 7 W |
| Minimum Gate Threshold Voltage | 1(N Channel)V, 1(P Channel)V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | HSOP8 |
| Pin Count | 8 |
| Series | HP8M31 |
| Typical Gate Charge @ Vgs | 12.3 nC @ 10 V(N Channel), 38 nC @ 10 V(P Channel) |
| Width | 5.8mm |
| Вес, г | 6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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