AS4C256M16D3C-93BCN, DRAM DDR3, 4G, 256M x 16, 1.5V, 96-ball FBGA, 2133MHz, Commercial Temp - Tray
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см. техническую документацию
см. техническую документацию
2 780 руб.
от 10 шт. —
2 450 руб.
от 25 шт. —
2 240 руб.
1 шт.
на сумму 2 780 руб.
Плати частями
от 695 руб. × 4 платежа
от 695 руб. × 4 платежа
Описание
Semiconductors\Memory ICs\DRAM
DDR3 Synchronous DRAMAlliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Технические параметры
Access Time: | 20 ns |
Brand: | Alliance Memory |
Data Bus Width: | 16 bit |
Factory Pack Quantity: Factory Pack Quantity: | 209 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 1.066 GHz |
Maximum Operating Temperature: | +95 C |
Memory Size: | 4 Gbit |
Minimum Operating Temperature: | 0 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 256 M x 16 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 87 mA |
Supply Voltage - Max: | 1.575 V |
Supply Voltage - Min: | 1.425 V |
Type: | SDRAM-DDR3 |
Техническая документация
Datasheet
pdf, 2645 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем