C3M0120100K, SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-247-4
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см. техническую документацию
см. техническую документацию
1092 шт., срок 5-7 недель
3 160 руб.
от 30 шт. —
2 360 руб.
от 510 шт. —
2 140 руб.
1 шт.
на сумму 3 160 руб.
Плати частями
от 790 руб. × 4 платежа
от 790 руб. × 4 платежа
Альтернативные предложения2
Описание
Unclassified
C3M0120100K Silicon Carbide Power MOSFETWolfspeed C3M0120100K Silicon Carbide Power MOSFET has 1kV in an optimized package suitable for fast switching devices. The C3M0120100K enhanced four lead TO-247-4 package provides lower switching losses with minimal gate circuit ringing due to the Kelvin gate connection. This feature increases creepage distance to support the operation of these higher voltage discrete devices. By optimizing electric-vehicle charging systems and three-phase industrial power supplies, the 1kV device addresses many power design challenges by providing a unique device. Wolfspeed C3M0120100K has low on-resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses.
Технические параметры
Brand: | Wolfspeed |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 8 ns |
Forward Transconductance - Min: | 7.7 S |
Id - Continuous Drain Current: | 22 A |
Manufacturer: | Wolfspeed |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 83 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 21.5 nC |
Rds On - Drain-Source Resistance: | 120 mOhms |
Rise Time: | 15 ns |
Subcategory: | MOSFETs |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 31 ns |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Vgs - Gate-Source Voltage: | -4 V, +15 V |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
Вес, г | 6 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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