MT53E128M32D2DS-046 AAT:A, DRAM LPDDR4 4G 128MX32 FBGA DDP Z19M
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Memory ICs\DRAM
LPDDR4 MemoryMicron LPDDR4 Memory is optimized to address power consumption issues in battery operated applications. These memory devices offer 33% faster peak bandwidth compared to DDR4. The LPDDR4 Memory provide 5 times lower power consumption in standby mode compared to standard DRAM. These Memory Devices feature Multi-Chip Package (MCP) and Package-on-Package (PoP) designs that save PCB space. The LPDDR4 Memory Devices optimize x16, x32, and x64 configurations and offer BOM savings for certain applications. The LPDDR4 Memory combines performance, power, latency, and physical space that makes it energy-efficient. These LPDDR4 Memory Devices are suitable for handsets, battery operated applications, and ultra-portables.
Технические параметры
Brand: | Micron |
Data Bus Width: | 32 bit |
Factory Pack Quantity: Factory Pack Quantity: | 1360 |
Manufacturer: | Micron Technology |
Maximum Clock Frequency: | 2.133 GHz |
Maximum Operating Temperature: | +105 C |
Memory Size: | 4 Gbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 128 M x 32 |
Package / Case: | VFBGA-200 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Series: | MT53E |
Subcategory: | Memory & Data Storage |
Supply Voltage - Max: | 1.1 V |
Type: | SDRAM Mobile-LPDDR4 |
Вес, г | 4.19 |
Техническая документация
Datasheet
pdf, 9316 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем