MT40A512M8SA-062E:F TR, DRAM DDR4 4G 512MX8 FBGA
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Memory ICs\DRAM
DDR4 SDRAMMicron DDR4 SDRAM has new features centered on power savings, performance enhancement, manufacturability, and reliability improvements. These features improve performance, power, manufacturability, reliability and stacking capabilities for the enterprise, cloud, ultrathin, tablet, automotive and embedded markets. DDR4 has data rates up to 3200MT/s, an operating voltage of 1.2V and additional power saving features. Increases performance up to 50% and deliver total energy savings up to 25% compared to DDR3.
Технические параметры
| Access Time: | 13.75 ns |
| Brand: | Micron |
| Data Bus Width: | 8 bit |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Manufacturer: | Micron Technology |
| Maximum Clock Frequency: | 1.6 GHz |
| Maximum Operating Temperature: | +95 C |
| Memory Size: | 4 Gbit |
| Minimum Operating Temperature: | 0 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 512 M x 8 |
| Packaging: | Reel, Cut Tape |
| Product Category: | DRAM |
| Product Type: | DRAM |
| Series: | MT40A |
| Subcategory: | Memory & Data Storage |
| Supply Current - Max: | 60 mA |
| Supply Voltage - Max: | 1.26 V |
| Supply Voltage - Min: | 1.14 V |
| Type: | SDRAM-DDR4 |
| Вес, г | 0.41 |
Техническая документация
Datasheet
pdf, 12376 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
