MT53D512M16D1DS-046 AIT:D, DRAM LPDDR4 8G 512MX16 FBGA Z11M

MT53D512M16D1DS-046 AIT:D, DRAM LPDDR4 8G 512MX16 FBGA Z11M
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2 660 руб.
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от 250 шт.2 060 руб.
от 500 шт.2 014.71 руб.
1 шт. на сумму 2 660 руб.
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Номенклатурный номер: 8004788034
Артикул: MT53D512M16D1DS-046 AIT:D

Описание

Semiconductors\Memory ICs\DRAM
LPDDR4 Memory

Micron LPDDR4 Memory is optimized to address power consumption issues in battery operated applications. These memory devices offer 33% faster peak bandwidth compared to DDR4. The LPDDR4 Memory provide 5 times lower power consumption in standby mode compared to standard DRAM. These Memory Devices feature Multi-Chip Package (MCP) and Package-on-Package (PoP) designs that save PCB space. The LPDDR4 Memory Devices optimize x16, x32, and x64 configurations and offer BOM savings for certain applications. The LPDDR4 Memory combines performance, power, latency, and physical space that makes it energy-efficient. These LPDDR4 Memory Devices are suitable for handsets, battery operated applications, and ultra-portables.

Технические параметры

Brand: Micron
Data Bus Width: 16 bit
Factory Pack Quantity: Factory Pack Quantity: 1360
Manufacturer: Micron Technology
Maximum Clock Frequency: 2.133 GHz
Maximum Operating Temperature: +85 C
Memory Size: 8 Gbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 512 M x 16
Package / Case: VFBGA-200
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Series: 110S
Subcategory: Memory & Data Storage
Supply Voltage - Max: 1.1 V
Type: SDRAM Mobile-LPDDR4

Техническая документация

Datasheet
pdf, 9332 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем