MSC010SDA120K, Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
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Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
Silicon Carbide (SiC) Schottky Barrier DiodesMicrochip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Технические параметры
| Brand: | Microchip Technology |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| If - Forward Current: | 27 A |
| Ifsm - Forward Surge Current: | 75 A |
| Ir - Reverse Current: | 3 uA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-2 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 136 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Series: | MSC0 |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 1.2 kV |
| Vrrm - Repetitive Reverse Voltage: | 1.2 kV |
| Diode Technology | Schottky Barrier |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 10A |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Peak Reverse Repetitive Voltage | 1200V |
| Rectifier Type | Schottky Diode |
| Series | MSC0 |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 333 КБ
Datasheet MSC010SDA120K
pdf, 332 КБ
Дополнительная информация
Калькуляторы группы «Диоды выпрямительные»
Типы корпусов импортных диодов
