STGB30H60DFB, IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
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см. техническую документацию
975 шт., срок 5-7 недель
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791 руб.
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от 264 руб. × 4 платежа
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Описание
Unclassified
HB Trench Gate Field-Stop IGBTs STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 60 A |
| Continuous Collector Current Ic Max: | 60 A |
| Factory Pack Quantity: | 1000 |
| Gate-Emitter Leakage Current: | +/-250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | D2PAK-3 |
| Pd - Power Dissipation: | 260 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Part Number | STGB30 |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 149nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power - Max | 260W |
| Reverse Recovery Time (trr) | 53ns |
| Series | - |
| Supplier Device Package | D2PAK |
| Switching Energy | 383ВµJ(on), 293ВµJ(off) |
| Td (on/off) @ 25В°C | 37ns/146ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 802 КБ
Datasheet STGP30H60DFB
pdf, 819 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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