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STGB30H65DFB2, IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT

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991 шт., срок 5-7 недель

690 руб.

от 10 шт. — 510 руб.

от 100 шт. — 387 руб.

от 250 шт. — 344.70 руб.

1 шт. на сумму 690 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8004828501

Артикул: STGB30H65DFB2

Бренд: STMicroelectronics

Описание

Unclassified

IGBT V Series STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Factory Pack Quantity:	1000
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	167 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	50 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	167 W
Number of Transistors	1
Package Type	D2PAK(TO-263)
Pin Count	3
Вес, г	2