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STGD6M65DF2, IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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2480 шт., срок 5-7 недель

380 руб.

от 10 шт. — 300 руб.

от 100 шт. — 216 руб.

от 500 шт. — 170.68 руб.

1 шт. на сумму 380 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8004828516

Артикул: STGD6M65DF2

Бренд: STMicroelectronics

Описание

Unclassified

STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Configuration:	Single
Continuous Collector Current at 25 C:	12 A
Continuous Collector Current Ic Max:	12 A
Factory Pack Quantity: Factory Pack Quantity:	2500
Gate-Emitter Leakage Current:	+/-250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3(TO-252-3)
Pd - Power Dissipation:	88 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGD6M65DF2
Subcategory:	IGBTs
Technology:	Si
Вес, г	0.33