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STGP8M120DF3, IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT

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1000 шт., срок 5-7 недель

1 000 руб.

от 10 шт. — 890 руб.

от 25 шт. — 817 руб.

от 100 шт. — 742.07 руб.

1 шт. на сумму 1 000 руб.

Плати частями
от 250 руб. × 4 платежа

Номенклатурный номер: 8004828590

Артикул: STGP8M120DF3

Бренд: STMicroelectronics

Описание

Unclassified

M Series 1200V Trench Gate Field-Stop IGBTs
STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Configuration:	Single
Continuous Collector Current at 25 C:	16 A
Continuous Collector Current Ic Max:	8 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	167 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	M
Subcategory:	IGBTs
Technology:	Si
Вес, г	2