STGW15H120DF2, IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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1090 шт., срок 5-7 недель
890 руб.
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630 руб.
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от 600 шт. —
416.76 руб.
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Описание
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1200V H Series Trench Gate Field-Stop IGBTsSTMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Continuous Collector Current Ic Max: | 15 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 259 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGW15H120DF2 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 30 A |
| Continuous Collector Current Ic Max | 15 A |
| Factory Pack Quantity | 600 |
| Gate-Emitter Leakage Current | 250 nA |
| Manufacturer | STMicroelectronics |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 259 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | 900-1300V IGBTs |
| Technology | Si |
| Unit Weight | 1.340411 oz |
| Вес, г | 38 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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