STGW80H65DFB-4, IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT

345 шт., срок 5-7 недель

2 050 руб.

от 10 шт. — 1 670 руб.

от 25 шт. — 1 510 руб.

от 100 шт. — 1 297.42 руб.

1 шт. на сумму 2 050 руб.

Плати частями
от 514 руб. × 4 платежа

Альтернативные предложения1

Номенклатурный номер: 8004828625

Артикул: STGW80H65DFB-4

Unclassified

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	120 A
Factory Pack Quantity:	600
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Packaging:	Tube
Pd - Power Dissipation:	470 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	5