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STGWA50M65DF2, IGBTs Trench gate field-stop IGBT M series, 650 V 50 A low loss

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540 шт., срок 5-7 недель

1 510 руб.

от 10 шт. — 1 180 руб.

от 25 шт. — 1 070 руб.

от 100 шт. — 856.97 руб.

1 шт. на сумму 1 510 руб.

Плати частями
от 379 руб. × 4 платежа

Альтернативные предложения2

Номенклатурный номер: 8004828644

Артикул: STGWA50M65DF2

Бренд: STMicroelectronics

Описание

Unclassified

650V IH Series IGBTs
STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V CE(sat) combined with very low turn-off energy. There are 40A and 50A devices already available in TO-247 Long Leads packages, 20A, and 30A devices are in development.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	+/-250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	375 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	HB2
Subcategory:	IGBTs
Technology:	Si
Вес, г	6