STGWT20H65FB, IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
![Фото 1/2 STGWT20H65FB, IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT](https://static.chipdip.ru/lib/184/DOC030184864.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/145/DOC027145334.jpg)
600 шт., срок 5-7 недель
540 руб.
от 10 шт. —
410 руб.
от 100 шт. —
325 руб.
от 300 шт. —
268.10 руб.
1 шт.
на сумму 540 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Unclassified
HB/HB2 Series Insulated-Gate Bipolar TransistorsSTMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.55 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 40 A |
Continuous Collector Current Ic Max: | 20 A |
Factory Pack Quantity: Factory Pack Quantity: | 300 |
Gate-Emitter Leakage Current: | 250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-3P |
Packaging: | Tube |
Pd - Power Dissipation: | 168 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | STGWT20H65FB |
Subcategory: | IGBTs |
Technology: | Si |
Channel Type | N |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 40 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 168 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Transistors | 1 |
Package Type | TO |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 6.76 |
Техническая документация
Datasheet
pdf, 454 КБ
Datasheet STGWT20H65FB
pdf, 1496 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.