FFSH20120ADN-F155, SiC Schottky Diodes 1200V SiC SBD 20A
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см. техническую документацию
см. техническую документацию
2 030 руб.
от 25 шт. —
1 650 руб.
1 шт.
на сумму 2 030 руб.
Плати частями
от 509 руб. × 4 платежа
от 509 руб. × 4 платежа
Описание
Unclassified
FFSH SiC Schottky Diodesonsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
Технические параметры
| Brand: | onsemi/Fairchild |
| Configuration: | Dual Anode Common Cathode |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| If - Forward Current: | 20 A |
| Ifsm - Forward Surge Current: | 96 A |
| Ir - Reverse Current: | 200 uA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FFSH20120ADN_F155 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Series: | FFSH20120A |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Termination Style: | Through Hole |
| Type: | Silicon Carbide Schottky Diode |
| Vf - Forward Voltage: | 1.45 V |
| Vr - Reverse Voltage: | 1.2 kV |
| Vrrm - Repetitive Reverse Voltage: | 1.2 kV |
| Вес, г | 6.39 |
Техническая документация
Datasheet
pdf, 305 КБ
Диоды импортные
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов
