FFSP15120A, SiC Schottky Diodes 1200V SiC SBD 15A
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см. техническую документацию
см. техническую документацию
1 500 руб.
1 шт.
на сумму 1 500 руб.
Плати частями
от 375 руб. × 4 платежа
от 375 руб. × 4 платежа
Описание
Unclassified
FFSP SiC Schottky Diodesonsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Технические параметры
Brand: | onsemi/Fairchild |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
If - Forward Current: | 15 A |
Ifsm - Forward Surge Current: | 115 A |
Ir - Reverse Current: | 200 uA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-220-2 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Silicon Carbide Diodes |
Series: | FFSP15120A |
Subcategory: | Diodes & Rectifiers |
Technology: | SiC |
Vf - Forward Voltage: | 1.45 V |
Vr - Reverse Voltage: | 1.2 kV |
Vrrm - Repetitive Reverse Voltage: | 1.2 kV |
Вес, г | 2.16 |
Техническая документация
Datasheet
pdf, 327 КБ
Диоды импортные
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов