FGY160T65SPD-F085, IGBTs 650V Field Stop Gen3 Trench IGBT
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см. техническую документацию
см. техническую документацию
3 890 руб.
от 10 шт. —
3 460 руб.
от 25 шт. —
2 560 руб.
от 50 шт. —
2 520.02 руб.
1 шт.
на сумму 3 890 руб.
Плати частями
от 974 руб. × 4 платежа
от 974 руб. × 4 платежа
Описание
Unclassified
Field Stop IGBTsonsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Технические параметры
Brand: | onsemi/Fairchild |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 240 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | +/-250 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | FGY160T65SPD_F085 |
Pd - Power Dissipation: | 882 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Qualification: | AEC-Q101 |
REACH - SVHC: | Details |
Series: | FGY160T65S_F085 |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 7 |
Техническая документация
Datasheet
pdf, 3431 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов