ADPA7006AEHZ, RF Amplifier 28 dBm P1dB, 20 dB gain

ADPA7006AEHZ, RF Amplifier 28 dBm P1dB, 20 dB gain
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51 950 руб.
от 10 шт.46 290 руб.
от 25 шт.45 300 руб.
от 50 шт.45 295.31 руб.
1 шт. на сумму 51 950 руб.
Плати частями
от 12 989 руб. × 4 платежа
Номенклатурный номер: 8004970666
Артикул: ADPA7006AEHZ
Бренд: Analog Devices

Описание

RF & Wireless\RF Integrated Circuits\RF Amplifier
ADPA7006 GaAs pHEMT MMIC Power Amplifier

Analog Devices ADPA7006 GaAs pHEMT MMIC Power Amplifier is a pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18GHz to 44GHz. The amplifier provides 23.5dB of small signal gain, 29dBm output power for 1dB compression, and a typical output third-order intercept of 38dBm. The ADPA7006 requires 800mA from a 5V supply on the supply voltage (V DD ) and features inputs and outputs that are internally matched to 50Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025mm wire bonds that are less than 0.31mm long.

Технические параметры

Brand: Analog Devices
Factory Pack Quantity: Factory Pack Quantity: 500
Gain: 23 dB
Manufacturer: Analog Devices Inc.
Maximum Operating Temperature: +85 C
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
NF - Noise Figure: 7 dB
Number of Channels: 1 Channel
OIP3 - Third Order Intercept: 39 dBm
Operating Frequency: 18 GHz to 44 GHz
Operating Supply Current: 800 mA
Operating Supply Voltage: 5 V
P1dB - Compression Point: 29 dBm
Packaging: Cut Tape
Product Category: RF Amplifier
Product Type: RF Amplifier
Subcategory: Wireless & RF Integrated Circuits
Technology: GaAs
Test Frequency: 20 GHz to 24 GHz
Type: Power Amplifiers
Вес, г 4.68

Техническая документация

Datasheet
pdf, 532 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы прочие»
Типы корпусов импортных микросхем