CSD17484F4T, MOSFET 30V N-Ch FemtoFET MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
FemtoFET Power MOSFETsTexas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 4 S |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PICOSTAR-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 920 pC |
| Rds On - Drain-Source Resistance: | 128 mOhms |
| Rise Time: | 1 ns |
| Series: | CSD17484F4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | FemtoFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV |
| Base Product Number | CSD17484 -> |
| Current - Continuous Drain (Id) @ 25В°C | 3A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.2nC @ 8V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 15V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 121mOhm @ 500mA, 8V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | FemtoFETв„ў -> |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Вес, кг | 80.6 |
Техническая документация
Datasheet
pdf, 1677 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
