CSD18531Q5A, MOSFET 60V N-Channel NexFET Power MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N-MOSFET, полевой, 60В, 100А, 156Вт, VSONP8 5x6мм Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | DRV8711EVM |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.7 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 156 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Rise Time: | 7.8 ns |
| Series: | CSD18531Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 4.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 2.7 ns |
| Id - Continuous Drain Current | 134 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 156 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 36 nC |
| Rds On - Drain-Source Resistance | 5.8 mOhms |
| Rise Time | 7.8 ns |
| RoHS | Details |
| Series | CSD18531Q5A |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 4.4 ns |
| Unit Weight | 0.000847 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 134 A |
| Maximum Drain Source Resistance | 5.8 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Power Dissipation | 3.1 W |
| Minimum Gate Threshold Voltage | 1.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V |
| Width | 5mm |
| Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet CSD18531Q5AT
pdf, 402 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
