LMG5200MOFT, Gate Drivers 80V GaN Half Bridge Power Stage
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 000 руб.
от 10 шт. —
3 500 руб.
от 25 шт. —
3 140 руб.
от 100 шт. —
2 569.65 руб.
Добавить в корзину 1 шт.
на сумму 4 000 руб.
Плати частями
от 1 000 руб. × 4 платежа
от 1 000 руб. × 4 платежа
Описание
Power\Power Management ICs\Gate Drivers
Gallium Nitride (GaN)Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.
Технические параметры
Brand: | Texas Instruments |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Drivers: | 1 Driver |
Number of Outputs: | 1 Output |
Operating Supply Current: | 3 mA |
Output Current: | 10 A |
Package / Case: | QFM-9 |
Packaging: | Reel, Cut Tape |
Product Category: | Gate Drivers |
Product Type: | Gate Drivers |
Product: | Half-Bridge Drivers |
Rds On - Drain-Source Resistance: | 15 Ohms |
Series: | LMG5200 |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 5.25 V |
Supply Voltage - Min: | 4.75 V |
Technology: | GaN |
Tradename: | GaN |
Type: | High-Side, Low-Side |
Вес, г | 2.34 |
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем