2N2219 PBFREE, Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0Vebo 800mA 800mW

Изображения служат только для ознакомления,
см. техническую документацию

488 шт., срок 5-7 недель

490 руб.

от 10 шт. — 390 руб.

от 100 шт. — 292 руб.

1 шт. на сумму 490 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8005049475

Артикул: 2N2219 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 30V 800mA 250MHz 800mW Through Hole TO-39

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	30 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current:	800 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	800 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39-3
Packaging:	Bulk
Pd - Power Dissipation:	800 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	2N22
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Power - Max	800mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	30V
Вес, г	3.26