2N2222 PBFREE, Bipolar Transistors - BJT NPN Silicon

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2621 шт., срок 5-7 недель

680 руб.

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от 100 шт. — 425 руб.

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1 шт. на сумму 680 руб.

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Номенклатурный номер: 8005049476

Артикул: 2N2222 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 30V 800mA 250MHz 500mW Through Hole TO-18

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	30 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current:	800 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	800 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-18-3
Packaging:	Bulk
Pd - Power Dissipation:	500 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max	500mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	30V
Вес, г	1