2N3416 PBFREE, Bipolar Transistors - BJT NPN 50V 500mA BULK HFE/225

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2434 шт., срок 5-7 недель

310 руб.

от 10 шт. — 240 руб.

от 100 шт. — 172 руб.

от 500 шт. — 140.52 руб.

1 шт. на сумму 310 руб.

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Альтернативные предложения1

Номенклатурный номер: 8005049509

Артикул: 2N3416 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 50V сквозное отверстие TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	75
DC Current Gain hFE Max:	225
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 2mA, 4.5V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	0.45