BC547B TIN/LEAD, Bipolar Transistors - BJT NPN 50Vcbo 50 Vceo 800mA 625mW Trans

1832 шт., срок 5-7 недель

380 руб.

от 10 шт. — 300 руб.

от 100 шт. — 218 руб.

от 500 шт. — 172.35 руб.

1 шт. на сумму 380 руб.

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Номенклатурный номер: 8005049694

Артикул: BC547B TIN/LEAD

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	600 mV
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hFE Min:	200
DC Current Gain hFE Max:	450
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package/Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	500 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	0.21