BC846BR TR PBFREE, Bipolar Transistors - BJT NPN 80Vcbo 65Vceo 5.0Vebo 200mA

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4455 шт., срок 5-7 недель

120 руб.

от 10 шт. — 80 руб.

от 100 шт. — 31 руб.

от 1000 шт. — 22.01 руб.

1 шт. на сумму 120 руб.

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Номенклатурный номер: 8005049696

Артикул: BC846BR TR PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 65V 100MHz для поверхностного монтажа SOT-23

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	600 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	350 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250mV @ 500ВµA, 10mA
Voltage - Collector Emitter Breakdown (Max)	65V
Вес, г	1