AIKW75N60CTXKSA1, IGBTs DISCRETES

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3 650 руб.

от 10 шт. — 3 100 руб.

1 шт. на сумму 3 650 руб.

Плати частями
от 914 руб. × 4 платежа

Номенклатурный номер: 8005238357

Артикул: AIKW75N60CTXKSA1

Unclassified

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	240
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Packaging:	Tube
Part # Aliases:	AIKW75N60CT SP001346756
Pd - Power Dissipation:	428 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	428 W
Package Type	PG-TO247-3
Pin Count	3
Вес, г	7