BGA7H1BN6E6327XTSA1, RF Amplifier RF MMIC SUB 3 GHZ
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Описание
RF & Wireless\RF Integrated Circuits\RF Amplifier
Low Noise Amplifier (LNA) ICs Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.
Технические параметры
| Brand: | Infineon Technologies |
| Factory Pack Quantity: | 15000 |
| Gain: | 12.3 dB |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| NF - Noise Figure: | 0.85 dB |
| OIP3 - Third Order Intercept: | 16 dBm |
| Operating Frequency: | 1.805 GHz to 2.69 GHz |
| Operating Supply Current: | 4.3 mA |
| Operating Supply Voltage: | 1.5 V to 3.6 V |
| P1dB - Compression Point: | 5 dBm |
| Part # Aliases: | BGA 7H1BN6 E6327 SP001402778 |
| Product Category: | RF Amplifier |
| Product Type: | RF Amplifier |
| Subcategory: | Wireless & RF Integrated Circuits |
| Supply Voltage - Max: | 3.6 V |
| Supply Voltage - Min: | 1.5 V |
| Technology: | SiGe |
| Test Frequency: | 2.5 GHz |
| Type: | Low Noise Amplifiers |
Техническая документация
Datasheet
pdf, 1214 КБ
Дополнительная информация
Калькуляторы группы «ВЧ усилители»
Типы корпусов импортных микросхем
