IKFW50N60DH3EXKSA1, IGBTs Y

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1 240 руб.
от 25 шт.880 руб.
1 шт. на сумму 1 240 руб.
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от 310 руб. × 4 платежа
Номенклатурный номер: 8005240058
Артикул: IKFW50N60DH3EXKSA1

Описание

Unclassified
TRENCHSTOP™ Advanced Isolation
Infineon Technologies TRENCHSTOP™ Advanced Isolation offers design flexibility, high output power, low cooling effort, high reliability, and electrical isolation. The TRENCHSTOP Advanced Isolation delivers 0.2% higher efficiency and 10% lower cooling effort with higher reliability. Two versions are performance-optimized to replace fully insulated packages (FullPAKs) and standard and high-performance isolation foils. The package targets applications like power factor correction (PFC) for air conditioners, uninterruptible power supply (UPS), and power converters for drives.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Configuration: Single
Continuous Collector Current at 25 C: 40 A
Continuous Collector Current Ic Max: 60 A
Factory Pack Quantity: Factory Pack Quantity: 240
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Package / Case: TO247-3
Packaging: Tube
Part # Aliases: IKFW50N60DH3E SP001502656
Pd - Power Dissipation: 130 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: Trenchstop High Speed 3
Subcategory: IGBTs
Technology: Si
Tradename: TRENCHSTOP
Maximum Power Dissipation 130 W
Package Type PG-TO247-3-AI
Вес, г 5.92

Техническая документация

Datasheet
pdf, 1926 КБ
Datasheet
pdf, 2000 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов