IKFW60N60EH3XKSA1, IGBTs Y

IKFW60N60EH3XKSA1, IGBTs Y
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см. техническую документацию
2 750 руб.
от 10 шт.2 240 руб.
от 25 шт.1 990 руб.
от 100 шт.1 814.13 руб.
1 шт. на сумму 2 750 руб.
Плати частями
от 689 руб. × 4 платежа
Номенклатурный номер: 8005240063
Артикул: IKFW60N60EH3XKSA1

Описание

Unclassified
TRENCHSTOP™ Advanced Isolation Infineon Technologies TRENCHSTOP™ Advanced Isolation offers design flexibility, high output power, low cooling effort, high reliability, and electrical isolation. The TRENCHSTOP Advanced Isolation delivers 0.2% higher efficiency and 10% lower cooling effort with higher reliability. Two versions are performance-optimized to replace fully insulated packages (FullPAKs) and standard and high-performance isolation foils. The package targets applications like power factor correction (PFC) for air conditioners, uninterruptible power supply (UPS), and power converters for drives.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: Single
Continuous Collector Current at 25 C: 64 A
Continuous Collector Current Ic Max: 63 A
Factory Pack Quantity: 240
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part # Aliases: IKFW60N60EH3 SP001672366
Pd - Power Dissipation: 164 W
Product Category: IGBTs
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Вес, г 6

Техническая документация

Datasheet
pdf, 1933 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов