IKP30N65F5, IGBTs IGBT PRODUCTS TrenchStop 5
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см. техническую документацию
см. техническую документацию
930 руб.
от 10 шт. —
740 руб.
от 25 шт. —
679 руб.
от 100 шт. —
529.02 руб.
1 шт.
на сумму 930 руб.
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Описание
Unclassified
TRENCHSTOP™ 5 F5 Discrete IGBTs Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages, and high voltage DC-DC topologies commonly found in applications like uninterruptible power supplies (UPS), inverter welding machines, and switch-mode power supplies. The 650V TRENCHSTOP 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP 5 H5 family.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 55 A |
| Factory Pack Quantity: | 500 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Operating Temperature Range: | -40 C to+175 C |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP001133082 IKP30N65F5XKSA1 |
| Pd - Power Dissipation: | 188 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 2244 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
