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IKP39N65ES5XKSA1, IGBTs Y

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990 руб.

от 10 шт. — 790 руб.

от 25 шт. — 702 руб.

от 100 шт. — 562.54 руб.

1 шт. на сумму 990 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8005240077

Артикул: IKP39N65ES5XKSA1

Бренд: INFINEON TECHNOLOGIES AG.

Описание

Unclassified

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high-speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. Infineon H5 IGBTs offer leading efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid- to high-range switching frequency converters.

Технические параметры

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.45 V
Configuration:	Single
Continuous Collector Current at 25 C:	62 A
Factory Pack Quantity:	500
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Packaging:	Tube
Part # Aliases:	IKP39N65ES5 SP002882512
Pd - Power Dissipation:	188 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Channel Type	N
Configuration	Single
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	62 A
Maximum Gate Emitter Voltage	30V
Maximum Power Dissipation	188 W
Number of Transistors	1
Package Type	PG-TO220
Pin Count	3
Transistor Configuration	Single
Вес, г	3