IKW20N65ET7XKSA1, IGBT Transistors INDUSTRY 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ IGBT7 Discretes & Modules Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable speed drives. 20% of energy or 17 million tons of CO2 could be saved if only half of all industrial drives had electric speed control. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.35 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 40 A |
Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | IKW20N65ET7 SP005348286 |
Pd - Power Dissipation: | 136 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Collector Current (Ic) | 40A |
Collector-Emitter Breakdown Voltage (Vces) | 650V |
Diode Reverse Recovery Time (Trr) | 70ns |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.65V@15V, 20A |
Input Capacitance (Cies@Vce) | - |
Operating Temperature | -40℃~+175℃@(Tj) |
Power Dissipation (Pd) | 136W |
Pulsed Collector Current (Icm) | 60A |
Total Gate Charge (Qg@Ic,Vge) | 128nC |
Turn?off Delay Time (Td(off)) | 210ns |
Turn?off Switching Loss (Eoff) | 0.36mJ |
Turn?on Delay Time (Td(on)) | 16ns |
Turn?on Switching Loss (Eon) | 0.36mJ |
Type | FS(Field Stop) |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | PG-TO247-3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов