IKW50N65ES5, IGBTs Trenchstop 5 IGBT
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см. техническую документацию
см. техническую документацию
1 670 руб.
от 10 шт. —
1 300 руб.
от 25 шт. —
1 190 руб.
от 100 шт. —
950.32 руб.
1 шт.
на сумму 1 670 руб.
Плати частями
от 419 руб. × 4 платежа
от 419 руб. × 4 платежа
Описание
Unclassified
TRENCHSTOP™ 5 IGBTsInfineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Operating Temperature Range: | -40 C to+175 C |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | SP001319682 IKW50N65ES5XKSA1 |
| Pd - Power Dissipation: | 274 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | TRENCHSTOP 5 S5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 38 |
Техническая документация
Datasheet IKW50N65ES5
pdf, 2064 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
