IXXX110N65B4H1, IGBTs 650V/240A TRENCH IGBT GENX4 XPT
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см. техническую документацию
см. техническую документацию
5 420 руб.
от 10 шт. —
4 540 руб.
от 30 шт. —
4 140 руб.
от 60 шт. —
3 632.72 руб.
1 шт.
на сумму 5 420 руб.
Плати частями
от 1 355 руб. × 4 платежа
от 1 355 руб. × 4 платежа
Описание
Unclassified
650V XPT™ High Speed Trench IGBTs IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10µs Short Circuit Safe Operating Area (SCSOA).
Технические параметры
Brand: | IXYS |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 2.1 V |
Configuration: | Copack(Sonic-FRD) |
Continuous Collector Current at 25 C: | 250 A |
Continuous Collector Current Ic Max: | 110 A |
Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | IXYS |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 880 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 7 |
Техническая документация
Datasheet
pdf, 415 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов