IXYA20N120A4HV, IGBTs TO263 1200V 20A XPT

IXYA20N120A4HV, IGBTs TO263 1200V 20A XPT
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1 690 руб.
от 10 шт.1 420 руб.
от 50 шт.1 170 руб.
от 100 шт.1 067.62 руб.
1 шт. на сумму 1 690 руб.
Плати частями
от 424 руб. × 4 платежа
Номенклатурный номер: 8005250346
Артикул: IXYA20N120A4HV
Бренд: Ixys Corporation

Описание

Unclassified
650V XPT™ High Speed Trench IGBTs IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10µs Short Circuit Safe Operating Area (SCSOA).

Технические параметры

Brand: IXYS
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.9 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Continuous Collector Current Ic Max: 135 A
Factory Pack Quantity: 50
Gate-Emitter Leakage Current: 100 nA
Manufacturer: IXYS
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: TO-263HV-3
Packaging: Tube
Pd - Power Dissipation: 375 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Вес, г 3

Техническая документация

Datasheet
pdf, 2315 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов