MMIX4G20N250, IGBT Transistors SMPDB 2500V 23A IGBT

MMIX4G20N250, IGBT Transistors SMPDB 2500V 23A IGBT
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Номенклатурный номер: 8005250495
Артикул: MMIX4G20N250
Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
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Технические параметры

Brand: IXYS
Collector- Emitter Voltage VCEO Max: 2.5 kV
Collector-Emitter Saturation Voltage: 3.1 V
Configuration: Half Bridge
Continuous Collector Current at 25 C: 23 A
Factory Pack Quantity: 20
Gate-Emitter Leakage Current: 100 nA
Manufacturer: IXYS
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: SMPD-24
Packaging: Tube
Pd - Power Dissipation: 100 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs
Technology: Si
Вес, г 8

Техническая документация

Datasheet
pdf, 1330 КБ

Дополнительная информация

Калькуляторы группы «IGBT модули»