HP8K22TB, MOSFETs 30V Nch+Nch Si MOSFET
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см. техническую документацию
см. техническую документацию
30454 шт., срок 5-7 недель
380 руб.
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300 руб.
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170.91 руб.
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Описание
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Silicon Power MOSFETs ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Технические параметры
Brand: | ROHM Semiconductor |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: | 2500 |
Fall Time: | 3.4 ns, 8.4 ns |
Forward Transconductance - Min: | 10 S, 18 S |
Id - Continuous Drain Current: | 27 A, 57 A |
Manufacturer: | ROHM Semiconductor |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package/Case: | HSOP-8 |
Part # Aliases: | HP8K22 |
Pd - Power Dissipation: | 3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10 nC, 16.8 nC |
Rds On - Drain-Source Resistance: | 6.7 mOhms, 3.6 mOhms |
Rise Time: | 4.5 ns, 7.2 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 25.5 ns, 34.7 ns |
Typical Turn-On Delay Time: | 9.6 ns, 13.2 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Brand | ROHM Semiconductor |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Factory Pack Quantity | 2500 |
Fall Time | 3.4 ns, 8.4 ns |
Forward Transconductance - Min | 10 S, 18 S |
Id - Continuous Drain Current | 27 A, 57 A |
Manufacturer | ROHM Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 2 Channel |
Package / Case | HSOP-8 |
Packaging | Reel |
Pd - Power Dissipation | 3 W |
Product Category | MOSFET |
Qg - Gate Charge | 10 nC, 16.8 nC |
Rds On - Drain-Source Resistance | 6.7 mOhms, 3.6 mOhms |
Rise Time | 4.5 ns, 7.2 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 25.5 ns, 34.7 ns |
Typical Turn-On Delay Time | 9.6 ns, 13.2 ns |
Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
Vgs - Gate-Source Voltage | 20 V, 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.3 V, 1.3 V |
Вес, г | 0.77 |
Техническая документация
Документация
pdf, 2285 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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