RGW80TS65DGC11, IGBTs 650V 40A TO-247N Field Stp Trnch IGBT
418 шт., срок 5-7 недель
1 700 руб.
от 10 шт. —
1 400 руб.
от 25 шт. —
1 280 руб.
от 100 шт. —
1 023.99 руб.
1 шт.
на сумму 1 700 руб.
Плати частями
от 425 руб. × 4 платежа
от 425 руб. × 4 платежа
Описание
Unclassified
Field Stop Trench IGBTs ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 78 A |
| Continuous Collector Current Ic Max: | 78 A |
| Factory Pack Quantity: | 450 |
| Gate-Emitter Leakage Current: | 200 nA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247N-3 |
| Packaging: | Tube |
| Part # Aliases: | RGW80TS65D |
| Pd - Power Dissipation: | 214 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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