RHK003N06T146, MOSFETs N-CH 60V 300MA
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435 шт., срок 5-7 недель
150 руб.
от 10 шт. —
120 руб.
от 100 шт. —
56 руб.
1 шт.
на сумму 150 руб.
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от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
Unclassified
Electronic Vehicle (EV) Solutions ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 80 ns |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-346-3 |
| Part # Aliases: | RHK003N06 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 3 nC |
| Rds On - Drain-Source Resistance: | 1 Ohms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Continuous Drain Current (Id) | 250mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.8Ω@10V, 200mA |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Input Capacitance (Ciss@Vds) | 25pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF@25V |
| Total Gate Charge (Qg@Vgs) | 400pC@4.5V |
| Type | N Channel |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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