MW7IC2020NT1, RF Amplifier HV7IC 2GHz 20W PQFN8X8
![MW7IC2020NT1, RF Amplifier HV7IC 2GHz 20W PQFN8X8](https://static.chipdip.ru/lib/680/DOC001680758.jpg)
см. техническую документацию
от 2 449 руб. × 4 платежа
Описание
MW7IC2020NT1 is a RF LDMOS wideband integrated power amplifier. This wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170MHz. This multi-stage structure is rated for 26 to 32Volt operation and covers all typical cellular base station modulation formats. Typical single-carrier W-CDMA performance: VDD = 28Volts, IDQ1 =40mA, IDQ2 = 230mA, Pout = 2.4Watts Avg., IQ magnitude clipping, channel bandwidth = 3.84MHz, Input signal PAR = 7.5dB at 0.01% probability on CCDF (driver application-2100MHz). Capable of handling 10: 1 VSWR, at 32Vdc, 2140MHz, Pout = 33Watts CW (3dB input. overdrive from rated Pout). Typical Pout at 1 dB compression point ≃ 20Watts CW.
• Characterized with series equivalent large signal impedance parameters and common source S-parameter
• On-chip matching (50 ohm input, DC blocked)
• Integrated quiescent current temperature compensation with enable/disable function
• Integrated ESD protection
• 2V typical gate threshold voltage (VDS = 10Vdc, ID = 12µAdc, on characteristics)
• 2.9VDC typ gate quiescent voltage (VDS = 28VDC, IDQ1 = 40mADC, on characteristics)
• 6.9VDC typ fixture gate quiescent voltage (VDD = 28VDC, IDQ1 = 40mADC, measured in functional test)
• 32.6dB power gain, 17% power added efficiency
• Adjacent channel power ratio ACPR of -51.4dBc typical
Технические параметры
Количество Выводов | 24вывод(-ов) |
Максимальная Рабочая Температура | 150°C |
Максимальная Частота | 2.2ГГц |
Минимальная Частота | 1.8ГГц |
Стиль Корпуса Радиочастотной Микросхемы | QFN |
Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
Усиление | 32.6дБ |
Техническая документация
Дополнительная информация
Калькуляторы группы «ВЧ усилители»
Типы корпусов импортных микросхем